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K2564 LBS13004 1046625 A74302 BB831 1N3671RA 258936 PEOSDO3B
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 JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3PN package High breakdown voltage High reliability Fast speed APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC3685
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 16 125 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3685
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
800
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=1A
5
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=1A
1.5
V
ICES
Collector cut-off current
VCE=1500V; RBE=0
1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
Switching times
tstg
Storage time IC=4A;IB1=0.8A; IB2=-1.6A V CC=200V
3.0
|I
s
tf
Fall time
0.1
0.2
|I
s
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3685
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3685
4


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